Bhadra? Vertical High-Temperature Oxidation Furnace HBO300
Advantage
Mainly used in the 12-inch high temperature oxidation and annealing process, the equipment can deposite the silicon dioxide film, which plays the role of protection, passivation, buffer media, etc. And can also be used to eliminate lattice defects and activate atomic arrangement.
Consultationor call:
86-18924169069 / 020-31569374
Technical Parameters
Wafer size: 12 inches
Process type: dry oxygen oxidation, wet oxygen oxidation, dichloroethylene oxygen oxidation and high temperature annealing
Compatible material: Silicon
Application fields: Power semiconductors, Integrated circuits, Substrate materials, Research
